MAGNETIC SENSOR DEVICE
To provide a magnetic sensor device in which influence of stress applied is suppressed.SOLUTION: A magnetic sensor device 1 comprises magnetic sensors 10, 20, 30, and a support medium 4. The center of mass of an element arrangement area of the magnetic sensors 10, 20, 30 is displaced from center of...
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Main Authors | , , , , |
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Format | Patent |
Language | English Japanese |
Published |
31.10.2023
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Subjects | |
Online Access | Get full text |
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Summary: | To provide a magnetic sensor device in which influence of stress applied is suppressed.SOLUTION: A magnetic sensor device 1 comprises magnetic sensors 10, 20, 30, and a support medium 4. The center of mass of an element arrangement area of the magnetic sensors 10, 20, 30 is displaced from center of mass C4 of a reference plane 4a of the support medium 4. Each of the magnetic sensors 10, 20, 30 includes four resistance parts composed of a plurality of MR elements. Magnetization of a free layer 54 in two resistance parts contains a component in a third magnetization direction. Magnetization of the free layer 54 in each of the remaining two resistance parts contains a component in a fourth magnetization direction opposite to the third magnetization direction.SELECTED DRAWING: Figure 8
【課題】印加される応力の影響を抑制できるようにした磁気センサ装置を実現する。【解決手段】磁気センサ装置1は、磁気センサ10,20,30と、支持体4とを備えている。磁気センサ10,20,30の素子配置領域の重心は、支持体4の基準平面4aの重心C4からずれている。磁気センサ10,20,30の各々は、複数のMR素子によって構成された4つの抵抗部を含んでいる。2つの抵抗部の各々における自由層54の磁化は、第3の磁化方向の成分を含んでいる。他の2つの抵抗部の各々における自由層54の磁化は、第3の磁化方向とは反対の第4の磁化方向の成分を含んでいる。【選択図】図8 |
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Bibliography: | Application Number: JP20230130731 |