FILM DEPOSITION METHOD AND FILM DEPOSITION APPARATUS

• Main Authors: UJIHARA YUSUKE, TAKEI MASAKI
• Format: Patent
• Language: English; Japanese
• Published: 24.10.2023
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To provide a film deposition method and film deposition apparatus, capable of depositing a film excellent in controllability of film quality by magnetron sputtering.SOLUTION: A film deposition method comprises: forming the pressure of an opposite substrate side space served as a space facing an opposite substrate side surface higher than that of a substrate side space served as a space facing a substrate side surface when using the substrate side of a target surface as a substrate side surface and using the side opposite to the substrate side surface of the target surface as an opposite substrate side surface in each of a plurality of rotary targets having a central axis and a target surface, including a magnet rotatable around the central axis in the inside and having the central axes parallel to each other; supplying discharge power to the plurality of rotary targets to deposit a film on a substrate by sputtering; and rotating the magnet around the central axis during the supply start and stop of the discharge power to move the magnet between a position facing the substrate side surface from the inside and a position facing the opposite substrate side surface in the inside.SELECTED DRAWING: Figure 4 【課題】マグネトロンスパッタリングにより膜質の制御性に優れた成膜を行うことが可能な成膜方法及び成膜装置を提供すること。【解決手段】本発明に係る成膜方法は、各ロータリターゲットが中心軸とターゲット面とを有し、中心軸の周りに回転可能な磁石を内部に備え、中心軸が互いに平行である複数のロータリターゲットを用い、複数のロータリターゲットのそれぞれにおいて、ターゲット面の基板側を基板側面とし、ターゲット面の基板側面とは反対側を反基板側面とした場合、反基板側面が面する空間である反基板側空間の圧力を基板側面が面する空間である基板側空間の圧力より高くする。複数のロータリターゲットに放電電力を供給して基板にスパッタリング成膜を行い、放電電力の供給開始から供給停止の間で、磁石を中心軸の周りに回転させ、内部から基板側面に対向する位置と内部から反基板側面に対向する位置の間で移動させる。【選択図】図４