SEMICONDUCTOR STORAGE DEVICE

• Main Authors: HAGISHIMA DAISUKE, KOIKE MASAHIRO
• Format: Patent
• Language: English; Japanese
• Published: 05.10.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a preferably operating semiconductor storage device.SOLUTION: A semiconductor storage device comprises a plurality of conductive layers, a semiconductor layer facing the plurality of conductive layers, and a gate insulation film provided between these layers. When a position corresponding to a surface on one side in a first direction of the first conductive layer is supposed to be a first position, a position corresponding to a surface on the other side in the first direction of a first conductive layer is supposed to be a second position, an intermediate position between the first position and the second position is supposed to be a third position, a position corresponding to a surface on one side in a first direction of a second conductive layer is supposed to be a fourth position, a position corresponding to a surface on the other side in the first direction of the second conductive layer is supposed to be a fifth position, an intermediate position between the fourth position and the fifth position is supposed to be a sixth position, and lengths of the semiconductor layer in the first to sixth positions in a second direction crossing the first direction are supposed to be a first length to a sixth length, respectively, the first length to the third length are smaller than the fourth length to the sixth length, the sixth length is greater than the fourth length and the fifth length, or the third length is smaller than the first length and the second length.SELECTED DRAWING: Figure 4 【課題】好適に動作する半導体記憶装置を提供する。【解決手段】半導体記憶装置は、複数の導電層と、複数の導電層に対向する半導体層と、これらの間に設けられたゲート絶縁膜と、を備える。第１導電層の第１方向の一方側の面に対応する位置を第１位置、第１導電層の第１方向の他方側の面に対応する位置を第２位置、第１位置及び第２位置の中間位置を第３位置、第２導電層の第１方向の一方側の面に対応する位置を第４位置、第２導電層の第１方向の他方側の面に対応する位置を第５位置、第４位置及び第５位置の中間位置を第６位置、第１位置～第６位置における半導体層の、第１方向と交差する第２方向の長さを、それぞれ、第１の長さ～第６の長さとすると、第１の長さ～第３の長さは、第４の長さ～第６の長さよりも小さく、第６の長さが第４の長さ及び第５の長さよりも大きく、又は、第３の長さが第１の長さ及び第２の長さよりも小さい。【選択図】図４