SEMICONDUCTOR DEVICE AND SEMICONDUCTOR STORAGE DEVICE

• Main Authors: MATSUO KAZUNORI, OCHIAI TAKAFUMI, TORAYA KENICHIRO, ISHIMARU YUKI, HOANG HA, HONDA SHOJI, SHIOKAWA TARO, TODA MASAYA, SAKUMA KIWAMU, OKAJIMA MUTSUMI, TAKAHASHI KOTA
• Format: Patent
• Language: English; Japanese
• Published: 05.10.2023
• Subjects: ELECTRICITY

To provide a semiconductor device with excellent transistor characteristics.SOLUTION: A semiconductor device of an embodiment comprises: a first electrode; a second electrode; an oxide semiconductor layer provided between the first electrode and the second electrode; a gate electrode surrounding the oxide semiconductor layer; and a gate insulation layer provided between the gate electrode and the oxide semiconductor layer, separated from the first electrode, and including nitrogen (N). A first distance between the first electrode and the gate insulation layer in a first direction from the first electrode toward the second electrode is smaller than a second distance between the first electrode and the gate electrode in the first direction.SELECTED DRAWING: Figure 1 【課題】トランジスタ特性の優れた半導体装置を提供する。【解決手段】実施形態の半導体装置は、第１の電極と、第２の電極と、第１の電極と第２の電極との間に設けられた酸化物半導体層と、酸化物半導体層を囲むゲート電極と、ゲート電極と酸化物半導体層との間に設けられ、第１の電極と離間し、窒素（Ｎ）を含むゲート絶縁層と、を備える。そして、第１の電極から第２の電極に向かう第１の方向の第１の電極とゲート絶縁層との間の第１の距離は、第１の方向の第１の電極とゲート電極との間の第２の距離よりも小さい。【選択図】図１