SUBSTRATE PROCESSING APPARATUS

• Main Authors: MORIYA CHIAKI, SEGAWA YUTA
• Format: Patent
• Language: English; Japanese
• Published: 05.10.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a technique capable of reducing a pressure fluctuation in an exhaust pipe with high accuracy.SOLUTION: A substrate processing apparatus comprises: a tower 40; a plurality of individual exhaust pipes 21; a collection exhaust pipe 22; a switching part 23; an external air conduction part 24; and a control part. The tower 40 contains a plurality of processing units 10 that is provided in parallel to a vertical direction. The switching part 23 switches a connection and a disconnection of the plurality of individual exhaust pipes 21 and the collection exhaust pipe 22. The external air conduction part 24 includes a flow path introducing an external air from an external part into the collection exhaust pipe 22. The control part controls an introduction area of the external air conduction part 24 on the basis of an individual introduction area corresponded to each of the plurality of processing units 10 and a switching state of the switching part 23. The individual introduction area corresponded to each of the plurality of processing units 10 is set in accordance with each installation position of the plurality of processing units 10.SELECTED DRAWING: Figure 3 【課題】排気管における圧力変動をより高い精度で低減させることができる技術を提供する。【解決手段】基板処理装置はタワー４０と複数の個別排気管２１と集合排気管２２と切換部２３と外気導入部２４と制御部とを備える。タワー４０は、鉛直方向に並んで設けられた複数の処理ユニット１０を含む。切換部２３は、複数の個別排気管２１の各々と集合排気管２２との連通および遮断を切り換える。外気導入部２４は、集合排気管２２に外部からの外気を導入する流路を有する。制御部は、複数の処理ユニット１０のそれぞれに対応する個別導入面積と、切換部２３の切換状態とに基づいて、外気導入部２４の導入面積を制御する。複数の処理ユニット１０にそれぞれ対応する個別導入面積は、複数の処理ユニット１０の各々の設置位置に応じて設定されている。【選択図】図３