METHOD FOR PRODUCING POROUS SILICON MATERIAL, POROUS SILICON MATERIAL, AND POWER STORAGE DEVICE

• Main Authors: MATSUBARA MASAHARU, WASEDA TETSUYA, SUZUKI RYO, NAGAMEGURI NAOYUKI, YOSHIDA ATSUSHI, OISHI KEIICHIRO, KAWAURA HIROYUKI, UCHIYAMA TAKAYUKI, KONDO YASUHITO
• Format: Patent
• Language: English; Japanese
• Published: 05.10.2023
• Subjects: BASIC ELECTRIC ELEMENTS; CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE; CHEMISTRY; COMPOUNDS THEREOF; ELECTRICITY; INORGANIC CHEMISTRY; METALLURGY; NON-METALLIC ELEMENTS; PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSIONOF CHEMICAL INTO ELECTRICAL ENERGY

To provide a porous silicon material in which, in materials containing Si, deterioration in charge/discharge characteristics is further suppressed.SOLUTION: A method for producing porous silicon material of the present disclosure includes a precursor step of melting and rapidly cooling and solidifying a Si, Al and Nb-containing raw material to yield a silicon alloy precursor, and a porosification step of removing Al component contained in silicon alloy to yield a porous silicon material.SELECTED DRAWING: None 【課題】Ｓｉを含む材料において、充放電特性の低下をより抑制する。【解決手段】本開示の多孔質シリコン材料の製造方法は、ＳｉとＡｌとＮｂとを含む原料を溶融し急冷凝固させシリコン合金の前駆体を得る前駆体工程と、シリコン合金に含まれるＡｌ成分を除去して多孔質シリコン材料を得る多孔化工程と、を含む。【選択図】なし