PHOTOMASK FOR EXTREME ULTRAVIOLET

• Main Authors: SON SUNG HOON, KIM SUHYEON, JEONG MIN GYO, SHIN INKYUN, KIM TAE YOUNG, LEE GEONGON
• Format: Patent
• Language: English; Japanese
• Published: 04.10.2023
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS

To provide a photomask with areas having patterns whose reflectance values are different from each other, while being suitably manufactured to prevent side lobe problems in a photomask with a high reflectance, and increase efficiency of manufacturing processes.SOLUTION: An extreme ultraviolet photomask includes: a conductive layer; a substrate disposed on the conductive layer; a multilayer, comprising different metals alternately stacked on the substrate; a protective layer disposed on the multilayer; a low-reflectance part disposed on the portion of the protective layer; and a high-reflectance part disposed on the other portion of the protective layer, wherein the low-reflectance part comprises a first absorbent layer disposed on the portion of the protective layer, a low-reflectance layer formed on the first absorbent layer, and a first intagliated part where the protective layer is exposed, and wherein the high-reflectance part comprises a second absorbent layer disposed on the other portion of the protective layer, a high-reflectance layer disposed on the second absorbent layer, and a second intagliated part where the protective layer is exposed.SELECTED DRAWING: Figure 1 【課題】反射率が互いに異なるパターンを有する領域を含み、高反射率のフォトマスクで発生し得るサイドローブ（ｓｉｄｅ ｌｏｂｅ）の問題を防止し、製造工程を効率化することができるフォトマスクを提供する。【解決手段】極紫外線用ブランクマスクおよびフォトマスクは、伝導層と、伝導層上に形成された基板と、基板上に異種の金属が交互に積層されて形成された多重層と、多重層上に形成された保護層と、保護層上の一部に形成された低反射部と、保護層上の他の一部に形成された高反射部と、を含み、低反射部は、保護層上の一部に形成された第１吸収層と、第１吸収層上に形成された低反射層と、保護層が露出される第１陰刻部とを含み、高反射部は、保護層上の他の一部に形成された第２吸収層と、第２吸収層上に形成された高反射層と、保護層が露出される第２陰刻部とを含む。【選択図】図１