THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

To provide a three-dimensional semiconductor device with a high integration degree, and a method of manufacturing the same.SOLUTION: A three-dimensional semiconductor device includes a stack structure ST and a vertical channel structure CH. The stack structure ST includes a first insulation pattern...

Full description

Saved in:
Bibliographic Details
Main Author AHN JUNG RYUL
Format Patent
LanguageEnglish
Japanese
Published 02.10.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:To provide a three-dimensional semiconductor device with a high integration degree, and a method of manufacturing the same.SOLUTION: A three-dimensional semiconductor device includes a stack structure ST and a vertical channel structure CH. The stack structure ST includes a first insulation pattern 102, a conductive pattern 126 on the first insulation pattern 102, and a second insulation pattern 118 that is formed to physically contact an upper surface of the conductive pattern 126 and has a different physical property than the first insulation pattern 102. The vertical channel structure CH is formed through the stack structure ST.SELECTED DRAWING: Figure 1B 【課題】高集積度を有する３次元半導体装置及びその製造方法を提供する。【解決手段】３次元半導体装置は、第１の絶縁パターン１０２、第１の絶縁パターン１０２の上部の導電パターン１２６、及び導電パターン１２６の上部表面と物理的に接するように形成され、第１の絶縁パターン１０２と異なる物性を有する第２の絶縁パターン１１８を含む積層構造体ＳＴと、積層構造体ＳＴを貫通するように形成される垂直チャンネル構造体ＣＨとを含む。【選択図】図１Ｂ
Bibliography:Application Number: JP20230000409