GAS CLEANING METHOD, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING METHOD, PROGRAM, AND SUBSTRATE PROCESSING DEVICE

• Main Authors: KOBAYASHI TAKAHIRO, HARADA TORU, HORII SADAYOSHI, NAKAMURA IWAO, NOMURA HISASHI
• Format: Patent
• Language: English; Japanese
• Published: 02.10.2023
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To provide a technique that makes it possible to deposit a film of more uniform thickness on the surface of a substrate.SOLUTION: A gas cleaning method includes the steps for (a) removing a first metallic element that constitutes a contaminant from a process chamber by supplying a chlorine-containing gas to the process chamber without supplying an oxygen-containing gas, and (b) removing a second metal element that constitutes a contaminant from the process chamber by supplying an oxygen-containing gas to the process chamber. The step (b) is performed after the step (a).SELECTED DRAWING: None 【課題】より均一な膜厚の膜を基板の表面上に成膜することができる技術を提供することにある。【解決手段】（ａ）処理室内に酸素含有ガスを供給せずに塩素含有ガスを供給して、汚染物質を構成する第１の金属元素を前記処理室から除去する工程と、（ｂ）処理室内に酸素含有ガスを供給して、汚染物質を構成する第２の金属元素を前記処理室から除去する工程と、を含み、工程（ｂ）は、工程（ａ）の後に行われる、ガスクリーニング方法。【選択図】なし