DRIVE CIRCUIT FOR OUTPUT TRANSISTOR, SEMICONDUCTOR DEVICE, AND AUTOMOBILE

• Main Authors: TATEISHI TETSUO, OSHITA HIROTO, YAMAGUCHI YUHEI
• Format: Patent
• Language: English; Japanese
• Published: 27.09.2023
• Subjects: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS; BASIC ELECTRONIC CIRCUITRY; CONTROL OR REGULATION THEREOF; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER; ELECTRICITY; GENERATION; PULSE TECHNIQUE

To reduce an on-resistance of an output transistor MH in such a situation that an input voltage VIN is low.SOLUTION: A drive circuit 200 drives an output transistor MH depending on a control signal SCTRL. A gate of a first transistor M1 is biased, and a source thereof is connected with an internal line 201. A control electrode of the output transistor MH is applied with a voltage VREGB of the internal line 201 during an ON period of the output transistor MH. A voltage correction circuit 270 acts on the internal line 201 to gently reduce the voltage VREGB of the internal line 201 with time.SELECTED DRAWING: Figure 5 【課題】入力電圧ＶＩＮの低い状況における出力トランジスタＭＨのオン抵抗を低減する。【解決手段】駆動回路２００は、制御信号ＳＣＴＲＬに応じて出力トランジスタＭＨを駆動する。第１トランジスタＭ１のゲートはバイアスされ、そのソースは内部ライン２０１と接続される。出力トランジスタＭＨの制御電極には、そのオン期間において内部ライン２０１の電圧ＶＲＥＧＢが印加される。電圧補正回路２７０は内部ライン２０１に作用し、内部ライン２０１の電圧ＶＲＥＧＢを時間的に緩やかに低下させる。【選択図】図５