SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS

• Main Authors: TANAKA HIROSHI, NOUDO SHINICHIRO
• Format: Patent
• Language: English; Japanese
• Published: 22.09.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS; OPTICS; PHYSICS; SEMICONDUCTOR DEVICES

To provide a solid-state imaging device capable of suppressing reflection and color mixing on a surface of a semiconductor substrate.SOLUTION: A solid-state imaging device 10 includes: a semiconductor substrate 100 on which a photoelectric conversion element is formed; a plurality of layers containing, in a given order from the semiconductor substrate side, a first transparent dielectric layer 300, a semiconductor layer 400, and a second transparent dielectric layer 500; and an inter-pixel light-shielding film 550. According to a solid-state imaging device according to the present technology, it is possible to provide a solid-state imaging device capable of suppressing reflection and color mixing on a surface of a semiconductor substrate.SELECTED DRAWING: Figure 1 【課題】半導体基板の表面での反射及び混色を抑制する固体撮像装置を提供する。【解決手段】固体撮像装置１０は、光電変換素子が形成された半導体基板１００と、第１透明誘電体層３００、半導体層４００及び第２透明誘電体層５００を半導体基板側からこの順に含む複数の層と、画素間遮光膜５５０と、を備える。本技術に係る固体撮像装置によれば、半導体基板の表面での反射及び混色を抑制できる固体撮像装置を提供することができる。【選択図】図１