RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, COMPOUND, AND POLYMER COMPOUND

• Main Authors: NGUYEN KHANHTIN, SUZUKI KAZUO, ONISHI KOSHI
• Format: Patent
• Language: English; Japanese
• Published: 22.09.2023
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CHEMISTRY; CINEMATOGRAPHY; COMPOSITIONS BASED THEREON; ELECTROGRAPHY; HOLOGRAPHY; MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS; MATERIALS THEREFOR; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; THEIR PREPARATION OR CHEMICAL WORKING-UP

To provide a resist composition capable of further enhancing etching resistance and achieving higher sensitivity.SOLUTION: The resist composition contains a resin component having a constituent unit derived from a compound represented by general formula (a0-1). In the general formula, Rm is an alkyl group, a halogenated alkyl group, a halogen atom or a hydrogen atom; L1 is an aliphatic hydrocarbon group; n is an integer of 0-2; Ra0 is an acid-dissociable group; Ra01 is an aliphatic hydrocarbon group; and Ra02, Ra03 and Ra04 are each a hydrocarbon group or a hydrogen atom.SELECTED DRAWING: None 【課題】エッチング耐性をより高められるとともに、高感度化を図ることができるレジスト組成物を提供する。【解決手段】一般式（ａ０－１）で表される化合物から誘導される構成単位を有する、樹脂成分を含有するレジスト組成物を採用する。一般式中、Ｒｍはアルキル基、ハロゲン化アルキル基、ハロゲン原子又は水素原子；Ｌ１は脂肪族炭化水素基；ｎは０～２の整数；Ｒａ０は酸解離性基である。Ｒａ０１は脂肪族炭化水素基；Ｒａ０２、Ｒａ０３及びＲａ０４は炭化水素基又は水素原子である。TIFF2023131588000097.tif44170【選択図】なし