RADIATION IMAGING DEVICE AND RADIATION IMAGING SYSTEM

• Main Authors: ISHII YOSHIAKI, OKADA HIDEYUKI
• Format: Patent
• Language: English; Japanese
• Published: 21.09.2023
• Subjects: DIAGNOSIS; ELECTRIC COMMUNICATION TECHNIQUE; ELECTRICITY; HUMAN NECESSITIES; HYGIENE; IDENTIFICATION; MEASUREMENT OF NUCLEAR OR X-RADIATION; MEASURING; MEDICAL OR VETERINARY SCIENCE; PHYSICS; PICTORIAL COMMUNICATION, e.g. TELEVISION; SURGERY; TESTING

To provide a radiation imaging device and a radiation imaging system that are advantageous in accurately detecting the presence or absence of irradiation with radiation.SOLUTION: In a radiation imaging device, an image acquisition unit 110 includes: a plurality of pixels that each include conversion elements S11-66 converting radiation into electric charges; a first bias source 203a that supplies a bias potential to the conversion element of a pixel PIXa in a first group of the plurality of pixels through a first bias line Bsa; a second bias source 203b that supplies a bias potential to the conversion element of a pixel PIXb in a second group of the plurality of pixels different from the first group through a second bias line Bsb; and a detection circuit that detects the presence or absence of irradiation with radiation based on a current flowing in the first bias line and a current flowing in the second bias line. The radiation imaging device further includes: a first capacitive element 211a that is arranged between the first bias line and a potential supply line supplying a predetermined potential; and a second capacitive element 211b that is arranged between the second bias line and the potential supply line.SELECTED DRAWING: Figure 2 【課題】放射線の照射の有無をより高い精度で検知するのに有利な放射線撮像装置及び放射線撮像システムを提供する。【解決手段】放射線撮像装置において、画像取得部１１０は、放射線を電荷に変換する変換素子Ｓ１１～６６を夫々含む複数の画素と、複数の画素のうち第１グループの画素ＰＩＸａの変換素子に第１バイアス線Ｂｓａを介してバイアス電位を供給する第１バイアス源２０３ａと、複数の画素のうち第１グループとは異なる第２グループの画素ＰＩＸｂの変換素子に第２バイアス線Ｂｓｂを介してバイアス電位を供給する第２バイアス源２０３ｂと、第１バイアス線を流れる電流及び第２バイアス線を流れる電流に基づいて放射線の照射の有無を検知する検知回路と、第１バイアス線と所定の電位を供給する電位供給線との間に配された第１容量素子２１１ａと、第２バイアス線と電位供給線との間に配された第２容量素子２１１ｂと、をさらに含む。【選択図】図２