PROCESSING DEVICE
To uniformly hold an in-plane thickness of a wafer after processing without grinding a holding surface when processing dust attached to the holding surface is removed.SOLUTION: A processing device 1 includes: a chuck table 10; a processing mechanism 20 for processing a wafer 100 held on the chuck ta...
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Main Author | |
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Format | Patent |
Language | English Japanese |
Published |
29.08.2023
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Subjects | |
Online Access | Get full text |
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Summary: | To uniformly hold an in-plane thickness of a wafer after processing without grinding a holding surface when processing dust attached to the holding surface is removed.SOLUTION: A processing device 1 includes: a chuck table 10; a processing mechanism 20 for processing a wafer 100 held on the chuck table 10; a table cleaning mechanism 30 for cleaning the holding surface 11; and a control part 50, wherein the table cleaning mechanism 30 includes: a base 311; a Peltier element 312 arranged on a lower surface of the base 311; a power supply part 34 for supplying DC power to the Peltier element 312; a lifting mechanism 33 for moving the base 311; and a water tank (water bonding mechanism) 35 for bonding water to the Peltier element 312, and the control part 50 bonds the water to a lower surface of the Peltier element 312, supplies the DC power to the Peltier element 312 and forms ice 39 on the lower surface of the Peltier element 312, lowers the base 311, brings the ice 39 into contact with the holding surface 11 and cleans the holding surface 11.SELECTED DRAWING: Figure 2
【課題】保持面に付着した加工屑を除去する際に保持面を削ることがなく、加工後のウェーハの面内厚さを均一に保持すること。【解決手段】チャックテーブル10と、該チャックテーブル10に保持されたウェーハ100を加工する加工機構20と、該保持面11を洗浄するテーブル洗浄機構30と、制御部50と、を備える加工装置1であって、テーブル洗浄機構30は、基台311と、該基台311の下面に配置するペルチェ素子312と、該ペルチェ素子312に直流電力を供給する電源部34と、基台311を移動させる昇降機構33と、ペルチェ素子312に水を付着させる水槽(着水機構)35を備え、制御部50は、ペルチェ素子312の下面に水を付着させ、ペルチェ素子312に直流電力を供給して該ペルチェ素子312の下面に氷39を形成し、基台311を下降させ保持面11に氷39を接触させて該保持面11を洗浄する。【選択図】図2 |
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Bibliography: | Application Number: JP20220022859 |