SEMICONDUCTOR DEVICE

• Main Authors: WATANABE SHOICHI, KAWASAKI KAORI, KATO KOTA, NAKAJIMA SHINGO
• Format: Patent
• Language: English; Japanese
• Published: 25.08.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To improve the characteristics of a transistor.SOLUTION: A semiconductor device of an embodiment comprises: a first and a second gate electrode; a first spacer layer covering the first gate electrode and a second spacer layer covering the second gate electrode; a first liner layer covering the first gate electrode via the first spacer layer and a second liner layer covering the second gate electrode via the second spacer layer; a first contact extending from above the first liner layer toward below the first spacer layer and including a first conductive layer connected to the first gate electrode; and a second contact extending from above the second liner layer toward below the second spacer layer and including a second conductive layer connected to the second gate electrode. The first conductive layer is in contact with a side surface of the first spacer layer via a first insulation layer covering a side wall of the first conductive layer, and the second conductive layer is directly in contact with a side surface of the second spacer layer.SELECTED DRAWING: Figure 1 【課題】トランジスタの特性を向上させること。【解決手段】実施形態の半導体装置は、第１及び第２のゲート電極と、第１及び第２のゲート電極をそれぞれ覆う第１及び第２のスペーサ層と、第１及び第２のスペーサ層を介して第１及び第２のゲート電極をそれぞれ覆う第１及び第２のライナ層と、第１のライナ層の上方から第１のスペーサ層の下方へと延び、第１のゲート電極に接続される第１の導電層を有する第１のコンタクトと、第２のライナ層の上方から第２のスペーサ層の下方へと延び、第２のゲート電極に接続される第２の導電層を有する第２のコンタクトと、を備え、第１の導電層は、第１の導電層の側壁を覆う第１の絶縁層を介して第１のスペーサ層と側面で接し、第２の導電層は、第２のスペーサ層と直接的に側面で接している。【選択図】図１