THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS

• Main Authors: WATANABE TSUKASA, OGIWARA TSUTOMU, MITSUI RYO, KANAYAMA MASAHIRO, BIYAJIMA YUSUKE
• Format: Patent
• Language: English; Japanese
• Published: 22.08.2023
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CINEMATOGRAPHY; COMPOSITIONS BASED THEREON; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS; MATERIALS THEREFOR; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES; THEIR PREPARATION OR CHEMICAL WORKING-UP

To provide: a thermosetting silicon-containing material used for forming a resist underlayer film, capable of contributing to enhanced sensitivity of an upper layer resist while keeping LWR thereof from degrading; a composition for forming a silicon-containing resist underlayer film, the composition containing the thermosetting silicon-containing material; and a patterning process using the composition.SOLUTION: The present invention discloses a thermosetting silicon-containing material containing one or more of a repeating unit represented by the following general formula (Sx-1), a repeating unit represented by the following general formula (Sx-2), and a partial structure represented by the following general formula (Sx-3), where R1 represents an iodine-containing organic group; and R2 and R3 are independently identical to R1, or independently represent a hydrogen atom, or a monovalent organic group having 1 to 30 carbon atoms.SELECTED DRAWING: None 【課題】上層レジストのＬＷＲを保持したまま感度向上に寄与できるレジスト下層膜を形成するために用いる熱硬化性ケイ素含有材料、これを含むケイ素含有レジスト下層膜形成用組成物、及びこの組成物を用いるパターン形成方法を提供する。【解決手段】下記一般式（Ｓｘ－１）で表される繰返し単位、下記一般式（Ｓｘ－２）で表される繰返し単位、及び下記一般式（Ｓｘ－３）で表される部分構造のいずれか一つ以上を含有するものであることを特徴とする熱硬化性ケイ素含有材料。TIFF2023116531000062.tif26128（式中、Ｒ１はヨウ素を含有する有機基である。Ｒ２、Ｒ３はそれぞれ独立にＲ１と同じか、水素原子又は炭素数１～３０の１価の有機基である。）【選択図】なし