SEMICONDUCTOR DEVICE AND POWER CONVERSION APPARATUS USING THE SAME

• Main Authors: FURUKAWA TOMOYASU, MIYOSHI TOMOYUKI
• Format: Patent
• Language: English; Japanese
• Published: 22.08.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a semiconductor device which has the low conduction loss and switching loss, can improve a turn-off cutoff resistance amount and has the high reliability.SOLUTION: A semiconductor device having a switching gate and a carrier control gate to be driven independently of each other, includes a central region cell, an outer peripheral region cell surrounding the whole periphery of the central region cell and a termination region surrounding the whole periphery of the outer peripheral region cell when the semiconductor device is viewed from above. The central region cell includes a switching element having the switching gate and the carrier control gate. The outer peripheral region cell is arranged between the central region cell and the termination region. A gate of the switching element of the outer peripheral region cell is constituted by only the carrier control gate.SELECTED DRAWING: Figure 1 【課題】低い導通損失とスイッチング損失を併せ持ち、かつ、ターンオフ遮断耐量を向上できる信頼性の高い半導体装置を提供する。【解決手段】互いに独立して駆動されるスイッチングゲートとキャリア制御ゲートとを有する半導体装置において、前記半導体装置を平面視した際、中心領域セルと、前記中心領域セルの全周を囲む外周領域セルと、前記外周領域セルの全周を囲む終端領域とを備え、前記中心領域セルは、前記スイッチングゲートと前記キャリア制御ゲートとを有するスイッチング素子を有し、前記外周領域セルは、前記中心領域セルと前記終端領域との間に配置され、前記外周領域セルのスイッチング素子のゲートは前記キャリア制御ゲートのみで構成されていることを特徴とする。【選択図】 図１