PLASMA PROCESSING APPARATUS

• Main Authors: SAKAI TOSHIHIKO, HIGASHI DAISUKE
• Format: Patent
• Language: English; Japanese
• Published: 18.08.2023
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To provide a plasma processing apparatus that is compact and can perform plasma processing with respect to a film that is continuously supplied.SOLUTION: A plasma processing apparatus (1) includes a processing chamber (2) for performing predetermined plasma processing with respect to a substrate to be processed (H1). The processing chamber (2) includes: a drum (6) for guiding the substrate to be processed (H1) that is continuously supplied into the processing chamber (2); and an antenna (8) for generating an inductive coupling plasma in the processing chamber (2). The antenna (8) is disposed inside the drum (6) and plasma processing is performed with respect to the substrate to be processed (H1) on the drum (6).SELECTED DRAWING: Figure 1 【課題】連続して供給されるフィルムに対してプラズマ処理を行うことができるコンパクトなプラズマ処理装置を提供する。【解決手段】プラズマ処理装置（１）は、被処理基板（Ｈ１）に対して所定のプラズマ処理を行う処理室（２）を備えている。処理室（２）の内部は、処理室（２）に連続して供給される被処理基板（Ｈ１）をガイドするドラム（６）と、処理室（２）の内部に誘導結合性のプラズマを発生させるためのアンテナ（８）と、を備えている。アンテナ（８）は、ドラム（６）の内部に配置され、プラズマ処理はドラム（６）上の被処理基板（Ｈ１）に対して行われている。【選択図】図１