ETCHING SOLUTION COMPOSITION AND ETCHING METHOD

• Main Authors: INAZUMI HIROKI, SHIMIZU TOSHIKAZU, YOSHIDA YUKI
• Format: Patent
• Language: English; Japanese
• Published: 15.08.2023
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; SEMICONDUCTOR DEVICES

To provide an etching solution composition that imparts a good etched surface shape to a metal to be etched at a controlled etch rate.SOLUTION: The present invention relates to an etching solution composition that contains (A) nitric acid, (B) acetic acid, (C) nitrilotris(methylenephosphonic acid), (D) a halogen compound, and (E) water.SELECTED DRAWING: None 【課題】本発明の課題は、エッチング対象となる金属に対して抑制されたエッチング速度で良好なエッチング表面形状を与えるエッチング液組成物を提供することにある。【解決手段】エッチング液組成物であって、エッチング液組成物が、（Ａ）硝酸、（Ｂ）酢酸、（Ｃ）ニトリロトリス（メチレンホスホン酸）、（Ｄ）ハロゲン化合物、および（Ｅ）水を含有するエッチング液組成物。【選択図】なし