IMAGE PICKUP DEVICE AND IMAGING APPARATUS
To perform focus detection of a phase difference detection method for division directions by using signals output from a plurality of pixels different in the division direction with respect to microlenses, and bring phase difference detection performances between the division directions closer to ea...
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Main Authors | , , , |
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Format | Patent |
Language | English Japanese |
Published |
28.07.2023
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Subjects | |
Online Access | Get full text |
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Summary: | To perform focus detection of a phase difference detection method for division directions by using signals output from a plurality of pixels different in the division direction with respect to microlenses, and bring phase difference detection performances between the division directions closer to each other.SOLUTION: An image pickup device includes a plurality of pixels arranged in a matrix state and reads signals from the pixels row by row. The plurality of pixels have a plurality of microlenses, and for each of the microlenses, a pair of first semiconductor areas, a pair of second semiconductor areas, and a plurality of connection areas connecting the first semiconductor areas and the second semiconductor areas. The arrangement direction of the first and second semiconductor areas of pixels having first arrangement is a first direction being a row direction. The arrangement direction of the first semiconductor areas of pixels having second arrangement is a second direction orthogonal to the first direction, and the arrangement direction of the second semiconductor areas of the pixels is the first direction. The crosstalk ratio between the first semiconductor areas in the second arrangement is reduced compared with the first arrangement.SELECTED DRAWING: Figure 5
【課題】 各マイクロレンズに対する分割方向が異なる複数の画素から出力された信号を用いて、各分割方向について位相差検出方式の焦点検出を行う場合に、分割方向間の位相差検出性能を近づけること。【解決手段】 行列状に配置された複数の画素を含み、行単位で画素の信号を読み出す撮像素子。複数の画素は、複数のマイクロレンズと、各マイクロレンズに対して、一対の第1の半導体領域と、一対の第2の半導体領域と、第1の半導体領域と第2の半導体領域とを接続する複数の接続領域とを有する。第1の配置を有する各画素の第1及び第2の半導体領域の並び方向は行の方向である第1の方向であって、第2の配置を有する各画素の第1の半導体領域の並び方向は第1の方向と直交する第2の方向、第2の半導体領域の並び方向は第1の方向であって、第2の配置における第1の半導体領域の間のクロストーク率を、第1の配置よりも低くしたことを特徴とする。【選択図】 図5 |
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Bibliography: | Application Number: JP20220005822 |