SEMICONDUCTOR WAFER SURFACE PROCESSING METHOD

• Main Authors: MARUNO NAOKI, AOKI KAZUFUMI, FURUKAWA RYUTA, SOLTANI BAHMAN
• Format: Patent
• Language: English; Japanese
• Published: 27.07.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR; PERFORMING OPERATIONS; SEMICONDUCTOR DEVICES; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL; TRANSPORTING; WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OFELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKESTHE PLACE OF A TOOL

To provide a technology capable of realizing processing characteristics superior to those of conventional ones in a semiconductor wafer surface processing method using anodization.SOLUTION: A semiconductor wafer (W) surface processing method according to the present disclosure includes the following processes, procedures, or steps. A pulse current having a current density of 20 mA/cm2 or more is passed through the semiconductor wafer (W) as an anode in the presence of an electrolytic solution (S), such that the surface to be processed (W1) of the semiconductor wafer is anodized and oxidized. In a state in which a grindstone layer of the surface processing pad (3) having the grindstone layer (32) faces the surface to be processed, an oxide formed on the surface to be processed by anodization and oxidization is selectively removed by the grindstone layer.SELECTED DRAWING: Figure 1 【課題】陽極酸化を援用した、半導体ウェハの表面加工方法において、従来よりも優れた加工特性を実現可能とする技術を提供すること。【解決手段】本開示に係る半導体ウェハ（Ｗ）の表面加工方法は、以下の処理、手順、あるいは工程を含む：電流密度が２０ｍＡ／ｃｍ２以上のパルス電流を、電解液（Ｓ）の存在下で半導体ウェハ（Ｗ）を陽極として通流させることで、前記半導体ウェハの被加工面（Ｗ１）を陽極酸化する。砥石層（３２）を有する表面加工パッド（３）における前記砥石層を前記被加工面と対向配置させた状態で、陽極酸化により前記被加工面に生成した酸化物を、前記砥石層により選択的に除去する。【選択図】図１