THIN FILM TRANSISTOR ELEMENT AND METHOD OF MANUFACTURING THE SAME

• Main Authors: MANABE TAKAO, INENARI HIROSHI, YOSHIMOTO HIROSHI
• Format: Patent
• Language: English; Japanese
• Published: 25.07.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a thin film transistor element with high electron mobility and a method of manufacturing the same.SOLUTION: A thin film transistor element includes: a gate layer 31; an oxide semiconductor thin film 4; a gate insulator 2 arranged between the gate layer and the oxide semiconductor thin film; and a resin film 6 which covers a pair of source/drain electrodes 51, 52 in contact with the oxide semiconductor thin film, and the oxide semiconductor thin film, and which contains SiH. Between the pair of source/drain electrodes 51 and 52, a channel region 45 where no electrode is provided is formed. The oxide semiconductor thin film has Sn as an essential component and also contains one or more metal elements selected from the group consisting of In, Ga, and Zn.SELECTED DRAWING: Figure 1 【課題】高電子移動度を有する薄膜トランジスタ素子およびその製造方法を提供する。【解決手段】薄膜トランジスタ素子は、ゲート層３１、酸化物半導体薄膜４、ゲート層と酸化物半導体薄膜との間に配置されたゲート絶縁膜２、酸化物半導体薄膜に接する一対のソース・ドレイン電極５１、５２および酸化物半導体薄膜を覆い、ＳｉＨを含有する樹脂膜６を備える。一対のソース・ドレイン電極５１、５２の間には、電極が設けられていないチャネル領域４５が形成される。酸化物半導体薄膜は、Ｓｎを必須成分とし、さらにＩｎ、ＧａおよびＺｎからなる群から選択される１種以上の金属元素を含む。【選択図】図１