SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

• Main Authors: OH DONG SUB, NOH MYOUNGSUB, KOO JOUNTAEK, KIM DONG-HUN, LEE SEONG GIL, PARK WAN JAE
• Format: Patent
• Language: English; Japanese
• Published: 13.07.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a substrate processing method and a substrate processing apparatus capable of implementing a high etching selection ratio between a silicon oxide film and a silicon nitride film.SOLUTION: A substrate processing method according to a mode of the present invention includes processing an indoor substrate, and performing at least one unit cycle including a substrate processing step of supplying a reactive gas in which radicals constituting plasma of first processing gas and second processing gas are mixed onto the substrate, and the substrate includes a first thin film and a second thin film having relatively lower reactivity to the reactive gas than the first thin film.SELECTED DRAWING: Figure 2 【課題】シリコン酸化膜とシリコン窒化膜の間の高いエッチング選択比を具現することができる基板処理方法及び基板処理装置を提供する。【解決手段】本発明の一様態による基板処理方法は、室内基板を処理する方法であって、第１の処理ガスのプラズマを構成するラジカルと第２の処理ガスが混合した反応ガスを基板上に供給する基板処理ステップを含む単位サイクルを少なくとも１回以上行い、前記基板は、第１の薄膜と、前記反応ガスに対する反応性が前記第１の薄膜よりも相対的に低い第２の薄膜を含む。【選択図】図２