SEMICONDUCTOR STORAGE DEVICE

• Main Authors: KISHI KOICHI, ITO NAOMI
• Format: Patent
• Language: English; Japanese
• Published: 06.07.2023
• Subjects: ELECTRICITY; INFORMATION STORAGE; PHYSICS; STATIC STORES

To provide a semiconductor storage device capable of being suitably manufactured.SOLUTION: A semiconductor storage device comprises: a substrate including a first region and a second region arranged in a first direction; first wiring extending in the first direction over the first and second regions; second wiring provided in the first region and extending in a second direction crossing the first direction; a first semiconductor layer provided in the first region, electrically connected to the second wiring, and facing the first wiring; a memory unit electrically connected to the first semiconductor layer; and a contact electrode extending in a third direction crossing a surface of the substrate and connected to the first wiring. The contact electrode includes a first portion overlapping the first wiring when viewed from the third direction, and a second portion not overlapping the first wiring when viewed from the third direction.SELECTED DRAWING: Figure 6 【課題】好適に製造可能な半導体記憶装置を提供する。【解決手段】半導体記憶装置は、第１方向に並ぶ第１領域及び第２領域を備える基板と、第１領域及び第２領域にまたがって第１方向に延伸する第１配線と、第１領域に設けられ、第１方向と交差する第２方向に延伸する第２配線と、第１領域に設けられ、第２配線に電気的に接続され、第１配線と対向する第１半導体層と、第１半導体層に電気的に接続されたメモリ部と、基板の表面と交差する第３方向に延伸し、第１配線に接続されたコンタクト電極とを備える。コンタクト電極は、第３方向から見て第１配線と重なる第１部分と、第３方向から見て第１配線と重ならない第２部分とを備える。【選択図】図６