POLISHING HEAD ASSEMBLY HAVING RECESS AND CAP

• Main Authors: HUANG WEI CHANG, YANG YAU CHING, LIN JEN CHIEH, HU CHIEH, HSU CHIH YUAN
• Format: Patent
• Language: English; Japanese
• Published: 05.07.2023
• Subjects: BASIC ELECTRIC ELEMENTS; DRESSING OR CONDITIONING OF ABRADING SURFACES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS; GRINDING; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; PERFORMING OPERATIONS; POLISHING; SEMICONDUCTOR DEVICES; TRANSPORTING

To provide a polishing apparatus that optimizes flatness parameters by modulating the wafer thickness shape in a polishing process.SOLUTION: A polishing head assembly 400 for polishing of semiconductor wafers includes a polishing head 210 and a cap 240. The polishing head has a recess 238 along a bottom portion 214. The recess has a recessed surface 216. The cap is positioned within the recess, and includes an annular wall 250 secured to the polishing head, and a floor 242 joined to the annular wall at a joint. The floor extends across the annular wall, and has a top surface 244 and a bottom surface 246. The top surface is disposed at a distance from the recessed surface to form a chamber 202 between the top surface and the recessed surface. A deformation resistance of a portion of the floor proximate to the joint 290 is weakened to allow the portion of the floor proximate to the joint to deflect relative to the polishing head by a change of pressure in the chamber.SELECTED DRAWING: Figure 4 【課題】研磨プロセスにおいて、ウェハの厚み形状を調整することで、平坦度パラメータを最適化する研磨装置を提供する。【解決手段】半導体ウェハの研磨のための研磨ヘッドアセンブリ４００は、研磨ヘッド２１０とキャップ２４０と、を含む。研磨ヘッドは、底部２１４に沿った凹部２３８を有し、凹部は凹面２１６を有する。キャップは、凹部内に配置されており、研磨ヘッドに固定された環状壁２５０と、接合部で環状壁に接合されたフロア２４２と、を備える。フロアは、環状壁を横切って延び、頂面２４４と、底面２４６と、を有し、頂面は、凹面から間隔を開けて配置され、頂面と凹面との間にチャンバ２０２を形成している。フロアのうち接合部２９０に近接する部分の変形抵抗は、チャンバ内の圧力変化によりフロアのうち接合部に近接する部分が研磨ヘッドに対して撓むことを許容するように、弱められている。【選択図】図４