SiC EPITAXIAL WAFER

• Main Authors: FUKADA KEISUKE, ISHIBASHI NAOTO
• Format: Patent
• Language: English; Japanese
• Published: 04.07.2023
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

To provide a SiC epitaxial wafer having high in-plane uniformity of doping concentration of a high-concentration layer.SOLUTION: A SiC epitaxial wafer 100 according the present invention includes a SiC single crystal substrate 10, and a high-concentration layer 21 (20) in which the average value of an n-type doping concentration is 2×1018/cm3 or more and 1×1019/cm3 or less, and an in-plane uniformity of doping concentration is 30% or less on the SiC single crystal substrate, and the high-concentration layer 21 (20) is doped with nitrogen. Here, the in-plane uniformity is the absolute value of (maximum value of in-plane doping concentration-minimum value of in-plane doping concentration)/average value of in-plane doping concentration.SELECTED DRAWING: Figure 1 【課題】高濃度層のドーピング濃度の面内均一性が高いＳｉＣエピタキシャルウェハを提供することである。【解決手段】本発明のＳｉＣエピタキシャルウェハ１００は、ＳｉＣ単結晶基板１０と、前記ＳｉＣ単結晶基板上に、ｎ型ドーピング濃度の平均値が２×１０１８／ｃｍ３以上、１×１０１９／ｃｍ３以下で、かつ、ドーピング濃度の面内均一性が３０％以下である高濃度層２１（２０）と、を備え、高濃度層２１（２０）には窒素がドープされている、ＳｉＣエピタキシャルウェハ；ここで、前記面内均一性とは、（面内のドーピング濃度の最大値－面内のドーピング濃度の最小値）の絶対値／面内のドーピング濃度の平均値、である。【選択図】図１