FIELD EFFECT TRANSISTOR DEVICE
To provide a normally-off field effect transistor device with less variation in a threshold voltage or less number of electrodes required for operation.SOLUTION: A field effect transistor device includes a gate electrode structure consisting of a first insulating film 105, a charge storage gate elec...
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Language | English Japanese |
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04.07.2023
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Abstract | To provide a normally-off field effect transistor device with less variation in a threshold voltage or less number of electrodes required for operation.SOLUTION: A field effect transistor device includes a gate electrode structure consisting of a first insulating film 105, a charge storage gate electrode 306, a second insulating film 111, and a gate electrode 112, which are sequentially laminated on a semiconductor, and a first capacitance formed by capacitive coupling between the charge storage gate electrode 306 and a source electrode 308, a charge is accumulated in the charge storage gate electrode 306 by a first current flowing through the first capacitance, and a laminated film composed of a third insulating film 315 and a first semiconductor layer 316 is provided between the source electrode 308 and the charge storage gate electrode 306, and at least a part of the first current flows through the laminated film.SELECTED DRAWING: Figure 3
【課題】閾値電圧の変動の少ない、或いは動作に必要な電極数の少ないノーマリオフ電界効果型トランジスタ装置を提供する。【解決手段】半導体上に順次積層される第1の絶縁膜105、電荷蓄積用ゲート電極306、第2の絶縁膜111、ゲート電極112からなるゲート電極構造と、電荷蓄積用ゲート電極306とソース電極308との間の容量結合により形成される第1の容量とを有し、前記第1の容量を流れる第1の電流により電荷蓄積用ゲート電極306に電荷が蓄積され、ソース電極308と電荷蓄積用ゲート電極306との間に第3の絶縁膜315と第1の半導体層316からなる積層膜を有し、前記第1の電流の少なくとも一部は前記積層膜を通して流れる。【選択図】図3 |
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AbstractList | To provide a normally-off field effect transistor device with less variation in a threshold voltage or less number of electrodes required for operation.SOLUTION: A field effect transistor device includes a gate electrode structure consisting of a first insulating film 105, a charge storage gate electrode 306, a second insulating film 111, and a gate electrode 112, which are sequentially laminated on a semiconductor, and a first capacitance formed by capacitive coupling between the charge storage gate electrode 306 and a source electrode 308, a charge is accumulated in the charge storage gate electrode 306 by a first current flowing through the first capacitance, and a laminated film composed of a third insulating film 315 and a first semiconductor layer 316 is provided between the source electrode 308 and the charge storage gate electrode 306, and at least a part of the first current flows through the laminated film.SELECTED DRAWING: Figure 3
【課題】閾値電圧の変動の少ない、或いは動作に必要な電極数の少ないノーマリオフ電界効果型トランジスタ装置を提供する。【解決手段】半導体上に順次積層される第1の絶縁膜105、電荷蓄積用ゲート電極306、第2の絶縁膜111、ゲート電極112からなるゲート電極構造と、電荷蓄積用ゲート電極306とソース電極308との間の容量結合により形成される第1の容量とを有し、前記第1の容量を流れる第1の電流により電荷蓄積用ゲート電極306に電荷が蓄積され、ソース電極308と電荷蓄積用ゲート電極306との間に第3の絶縁膜315と第1の半導体層316からなる積層膜を有し、前記第1の電流の少なくとも一部は前記積層膜を通して流れる。【選択図】図3 |
Author | TAKATANI SHINICHIRO SHIRATA RIICHIRO |
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DocumentTitleAlternate | 電界効果型トランジスタ装置 |
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Snippet | To provide a normally-off field effect transistor device with less variation in a threshold voltage or less number of electrodes required for... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | FIELD EFFECT TRANSISTOR DEVICE |
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