FIELD EFFECT TRANSISTOR DEVICE

• Main Authors: TAKATANI SHINICHIRO, SHIRATA RIICHIRO
• Format: Patent
• Language: English; Japanese
• Published: 04.07.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a normally-off field effect transistor device with less variation in a threshold voltage or less number of electrodes required for operation.SOLUTION: A field effect transistor device includes a gate electrode structure consisting of a first insulating film 105, a charge storage gate electrode 306, a second insulating film 111, and a gate electrode 112, which are sequentially laminated on a semiconductor, and a first capacitance formed by capacitive coupling between the charge storage gate electrode 306 and a source electrode 308, a charge is accumulated in the charge storage gate electrode 306 by a first current flowing through the first capacitance, and a laminated film composed of a third insulating film 315 and a first semiconductor layer 316 is provided between the source electrode 308 and the charge storage gate electrode 306, and at least a part of the first current flows through the laminated film.SELECTED DRAWING: Figure 3 【課題】閾値電圧の変動の少ない、或いは動作に必要な電極数の少ないノーマリオフ電界効果型トランジスタ装置を提供する。【解決手段】半導体上に順次積層される第１の絶縁膜１０５、電荷蓄積用ゲート電極３０６、第２の絶縁膜１１１、ゲート電極１１２からなるゲート電極構造と、電荷蓄積用ゲート電極３０６とソース電極３０８との間の容量結合により形成される第１の容量とを有し、前記第１の容量を流れる第１の電流により電荷蓄積用ゲート電極３０６に電荷が蓄積され、ソース電極３０８と電荷蓄積用ゲート電極３０６との間に第３の絶縁膜３１５と第１の半導体層３１６からなる積層膜を有し、前記第１の電流の少なくとも一部は前記積層膜を通して流れる。【選択図】図３