PROCESS GAS SUPPLYING UNIT AND SUBSTRATE TREATING APPARATUS INCLUDING THE SAME

• Main Authors: LEE KYOUNG RAE, CHANG LOUNG SUE, LEE SUN RYUM, JEON SEUNG HOON, YANG JUNG YOON, LIM IN SEONG
• Format: Patent
• Language: English; Japanese
• Published: 29.06.2023
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To provide a process gas supplying unit for uniformly supplying a process gas to each region on a substrate, a substrate treating apparatus including the same.SOLUTION: A substrate treating apparatus includes: a housing; an electrostatic chuck as a second electrode that supports a substrate inside the housing; an antenna unit that is arranged inside and outside the housing, functions as a first electrode opposite to the second electrode; a process gas supplying unit that provides the process gas; and a plasma generation unit that generates plasma inside the housing using a first high frequency electric power source that is connected to the first electrode when supplied with the process gas and a second high frequency electric power source that is connected to the second electrode when supplied with the process gas. The process gas supplying unit includes: a spraying nozzle 230 that is provided in an inner wall of the housing and sprays the process gas; and a rotational control unit 300 that is provided in an outside housing and is connected to the spraying nozzle via a hole formed in the inner side wall of the housing in a manner penetrating the inner side wall, and rotates the spraying nozzle.SELECTED DRAWING: Figure 3 【課題】プロセスガスを基板上の各領域に均一に提供するためのプロセスガス供給ユニット、それを含む基板処理装置及びプロセスガス供給ユニットを提供する。【解決手段】基板処理装置は、ハウジング、その内部で基板を支持する第２電極としての静電チャック、ハウジングの内部又は外部に配置され、第２電極と対向する第１電極としてのアンテナユニット、プロセスガスを提供するプロセスガス供給ユニット及びプロセスガスが提供されると第１電極と連結される第１高周波電源と、第２電極と連結される第２高周波電源と、を用いてハウジングの内部にプラズマを発生させるプラズマ生成ユニットを含む。プロセスガス供給ユニットは、ハウジングの内側壁に設けられ、プロセスガスを噴射する噴射ノズル２３０及びハウジングの外側壁に設けられ、ハウジングの内側壁を貫通して形成された孔を介して噴射ノズルと連結され、噴射ノズルを回転させる回転制御部３００を含む。【選択図】図３