RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD

• Main Authors: TAKAGI DAICHI, ADEGAWA MINORU, NAKAMURA KIMIYOSHI, TSUJI HIROMITSU, NAKAMURA TAKESHI
• Format: Patent
• Language: English; Japanese
• Published: 29.06.2023
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CHEMISTRY; CINEMATOGRAPHY; COMPOSITIONS BASED THEREON; ELECTROGRAPHY; HOLOGRAPHY; MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS; MATERIALS THEREFOR; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; THEIR PREPARATION OR CHEMICAL WORKING-UP

To provide a resist composition and a resist pattern forming method which are capable of forming a resist pattern with reduced occurrence of watermark defects.SOLUTION: The resist composition contains: a resin component (A1) whose solubility in a developer changes by the action of an acid; a photodegradable base (D0); and a fluorine additive component (F). The fluorine additive component (F) contains a polymer compound having a constituent unit represented by formula (f01-1) and a constituent unit represented by formula (f02-1). Vf01 represents an alkylene group or a halogenated alkylene group; Yf01 represents -CO-O- or -O-CO-; Rf01 represents an organic group containing a fluorine atom; Rf02 represents an acid-dissociable group represented by formula (f02-r1-1); Rf021, Rf022, Rf023, Rf024 and Rf025 represent hydrocarbon groups; and Yf02 represents a quaternary carbon atom.SELECTED DRAWING: None 【課題】ウォーターマークディフェクトの発生が低減されたレジストパターンを形成可能な、レジスト組成物及びレジストパターン形成方法の提供。【解決手段】酸の作用により現像液に対する溶解性が変化する樹脂成分（Ａ１）、光崩壊性塩基（Ｄ０）及びフッ素添加剤成分（Ｆ）を含有するレジスト組成物。フッ素添加剤成分（Ｆ）は、式（ｆ０１－１）で表される構成単位及び式（ｆ０２－１）で表される構成単位を有する高分子化合物を含む。Ｖｆ０１はアルキレン基又はハロゲン化アルキレン基。Ｙｆ０１は－ＣＯ－Ｏ－又は－Ｏ－ＣＯ－。Ｒｆ０１はフッ素原子を含む有機基。Ｒｆ０２は式（ｆ０２－ｒ１－１）で表される酸解離性基。Ｒｆ０２１、Ｒｆ０２２、Ｒｆ０２３、Ｒｆ０２４及びＲｆ０２５は炭化水素基。Ｙｆ０２は第４級炭素原子。TIFF2023090300000099.tif48170【選択図】なし