BLANK MASK, AND PHOTOMASK USING THE SAME

• Main Authors: LEE HYEONG JU, CHOI SUK YOUNG, SON SUNG HOON, KIM SOOHYUN, KIM KYUHUN, KIM SUHYEON, JEONG MIN GYO, SHIN INKYUN, LEE GEONGON
• Format: Patent
• Language: English; Japanese
• Published: 27.06.2023
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS

SOLUTION: A blank mask according to an embodiment includes a light-transmitting substrate 10, and a light-shielding film 20 arranged on the light-transmitting substrate 10. The light-shielding film 20 includes a first light-shielding layer 21, and a second light-shielding layer 22 arranged on the first light-shielding layer. The second light-shielding layer 22 includes transition metal and at least any one of oxygen and nitrogen. The reflectance of the surface of the light-shielding film 20 for light having wavelength 193nm is 20% or more and 40% or less. The hardness value of the second light-shielding layer 22 is 0.3kPa or more and 0.55kPa or less.EFFECT: In this case, when performing high-sensitivity defect inspection to the surface of a light-shielding film, accuracy of defect inspection can be improved, and generation of particles can be effectively suppressed in a patterning process.SELECTED DRAWING: Figure 1 【解決手段】具現例に係るブランクマスクは、光透過性基板１０、及び光透過性基板１０上に配置される遮光膜２０を含む。遮光膜２０は、第１遮光層２１、及び第１遮光層上に配置される第２遮光層２２を含む。第２遮光層２２は、遷移金属と、酸素及び窒素のうちの少なくともいずれか１つとを含む。波長１９３ｎｍの光に対する遮光膜２０の表面の反射率は２０％以上４０％以下である。第２遮光層２２の硬度値は０．３ｋＰａ以上０．５５ｋＰａ以下である。【効果】このような場合、遮光膜の表面に高感度の欠陥検査を行う際に、欠陥検査の正確度を向上させることができ、パターニング過程でパーティクルの発生を効果的に抑制することができる。【選択図】図１