SWITCHING ELEMENT AND STORAGE DEVICE

• Main Authors: ITAI SHOGO, NAKAYAMA MASAHIKO, MATSUZAWA KAZUYA, SUGIYAMA HIDEYUKI, KANAYA HIROYUKI
• Format: Patent
• Language: English; Japanese
• Published: 27.06.2023
• Subjects: ELECTRICITY

To provide a storage device including a switching element with excellent characteristics.SOLUTION: A switching element 50 according to an embodiment includes a first conductive layer 51, a second conductive layer 52, and a switching material layer 53 provided between the first conductive layer and the second conductive layer and formed of an insulation material containing an additive element. A concentration of the additive element in the switching material element has a first peak in a first interface region 53a including a first interface 54 between the first conductive layer and the switching material layer and a neighboring region of the first interface.SELECTED DRAWING: Figure 4A 【課題】 優れた特性を有するスイッチング素子を含む記憶装置を提供する。【解決手段】 実施形態に係るスイッチング素子５０は、第１の導電層５１と、第２の導電層５２と、第１の導電層と第２の導電層との間に設けられ、添加元素を含有する絶縁材料で形成されたスイッチング材料層５３と、を含む。スイッチング材料層中の添加元素の濃度は、第１の導電層とスイッチング材料層との第１の界面５４と第１の界面の近傍の領域とを含む第１の界面領域５３ａに第１のピークを有する。【選択図】図４Ａ