DEVELOPER FOR METAL RESIST, DEVELOPMENT METHOD AND METAL RESIST PATTERN FORMATION METHOD

• Main Authors: KUMAGAI TOMOYA, SUGAWARA MAI, RYZHII IVAN
• Format: Patent
• Language: English; Japanese
• Published: 26.06.2023
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

To provide a developer for metal resist, with improved metal removability and excellent stability, a development method using the developer for metal resist, and a metal resist pattern formation method using the developer for metal resist.SOLUTION: The present invention provides a developer for metal resist. The developer contains a solvent and a strong acid to be liquid at 20°C. The developer diluted by a factor of 10 fold with pure water has a pH value of 1.99 or more as measured with a pH meter.SELECTED DRAWING: None 【課題】金属除去性が向上し、安定性が良好な金属レジスト用現像液、該金属レジスト用現像液を用いた現像方法、及び該金属レジスト用現像液を用いた金属レジストパターン形成方法の提供。【解決手段】金属レジスト用現像液であって、溶剤と２０℃で液体の強酸とを含有する現像液であって、前記現像液を純水で１０倍に希釈した液の、ｐＨメーターで測定したｐＨ値が１．９９以上である現像液。【選択図】なし