SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME

• Main Author: HOSHI SHINICHI
• Format: Patent
• Language: English; Japanese
• Published: 22.06.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To reduce the restriction on an electrode to be connected to a semiconductor element.SOLUTION: A semiconductor substrate 10 includes: a GaN substrate 11 with a hexagonal crystal in which a first main surface 11a is an m-plane, one direction in a plane direction of the first main surface 11a is a direction along a c-axis direction, and a second main surface 11b on the opposite side of the first main surface 11a forms the other surface 10b of the semiconductor substrate 10; a plurality of first column regions 12 disposed on the first main surface 11a of the GaN substrate and formed of a first nitride semiconductor layer; and second column regions 13 disposed on the first main surface 11a of the GaN substrate 11, formed of a second nitride semiconductor layer with a higher band gap than the first nitride semiconductor layer, and forming a PSJ structure 14 with the first column regions. The first column regions and the second column regions are alternately disposed along the c-axis direction on the first main surface. Current flows between one surface 10a and the other surface 10b of the semiconductor substrate 10.SELECTED DRAWING: Figure 1 【課題】半導体素子と接続される電極の制約を低減する。【解決手段】半導体基板１０は、六方晶とされ、第１主面１１ａがｍ面とされると共に第１主面１１ａの面方向における一方向がｃ軸方向に沿った方向とされ、第１主面１１ａと反対側の第２主面１１ｂが半導体基板１０の他面１０ｂを構成するＧａＮ基板１１と、ＧａＮ基板の第１主面１１ａ上に配置され、第１窒化物半導体層で構成される複数の第１カラム領域１２と、ＧａＮ基板１１の第１主面１１ａ上に配置され、第１窒化物半導体層よりもバンドギャップの高い第２窒化物半導体層で構成され、第１カラム領域と共にＰＳＪ構造１４を構成する第２カラム領域１３と、を有し、第１カラム領域および第２カラム領域は、第１主面におけるｃ軸方向に沿って交互に配列されており、半導体基板１０の一面１０ａと他面１０ｂとの間を電流が流れるようにする。【選択図】図１