SEMICONDUCTOR MANUFACTURING APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

• Main Authors: FUJITA JUNYA, MATSUI TAKAYUKI, OMOTO SEIICHI
• Format: Patent
• Language: English; Japanese
• Published: 16.06.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a semiconductor manufacturing apparatus which can appropriately supply a gas to a substrate when forming a film onto the substrate, and provide a manufacturing method of a semiconductor device.SOLUTION: A semiconductor manufacturing apparatus comprises: a housing part that houses a substrate; a heater that heats the substrate housed in the housing part; and an injector that supplies a gas to the substrate housed in the housing part. In addition, the injector contains: a first layer that has a pipe-like form; and a second layer that is provided onto a front surface of the first layer, and includes an emissivity of 0.5 or less.SELECTED DRAWING: Figure 1 【課題】基板上に膜を形成する際に基板に好適なガスを供給可能な半導体製造装置および半導体装置の製造方法を提供する。【解決手段】一の実施形態によれば、半導体製造装置は、基板を収容する収容部と、前記収容部内に収容された前記基板を加熱するヒータと、前記収容部内に収容された前記基板にガスを供給するインジェクタとを備える。さらに、前記インジェクタは、管状の形状を有する第１層と、前記第１層の表面に設けられ、０．５以下の放射率を有する第２層とを含む。【選択図】図１