SEMICONDUCTOR DEVICE

• Main Authors: TANAKA HIROYUKI, AZUMA MASAHIKO
• Format: Patent
• Language: English; Japanese
• Published: 13.06.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a semiconductor device capable of suppressing deterioration of forward current-voltage characteristics and a forward breakdown current, suppressing expansion of an element area, and improving a reverse breakdown voltage.SOLUTION: A semiconductor devices includes: a diode element that includes, on the surface of a semiconductor substrate 1 having the first conductivity type, which is P-type or N-type, a high-concentration first-conductivity-type impurity region 6 having a first conductivity type, a high-concentration second-conductivity-type impurity region 5 having a second conductivity type opposite to the first conductivity type, and an element isolation region 2 in contact with one end of high-concentration first-conductivity-type impurity region and one end of high-concentration second-conductivity-type impurity region, and uses a PN junction; and a floating layer 3 having a second conductivity type separated from the high concentration second conductivity type impurity region below the high concentration second conductivity type impurity region in the semiconductor substrate.SELECTED DRAWING: Figure 1 【課題】順方向電流電圧特性及び順方向破壊電流の低下並びに素子面積の拡大が抑制されるとともに、逆方向破壊耐圧を向上させることがきる半導体装置を提供する。【解決手段】Ｐ型又はＮ型である第１の導電型を有する半導体基板１の表面において、第１の導電型を有する高濃度第１導電型不純物領域６、第１の導電型とは逆の導電型である第２の導電型を有する高濃度第２導電型不純物領域５、及び高濃度第１導電型不純物領域の一端と高濃度第２導電型不純物領域の一端に接する素子分離領域２を含む、ＰＮ接合を利用したダイオード素子と、半導体基板における高濃度第２導電型不純物領域の下方に高濃度第２導電型不純物領域と離間した第２の導電型を有する浮遊層３と、を備えた半導体装置。【選択図】図１