SILICON WAFER AND EPITAXIAL SILICON WAFER

• Main Authors: NONAKA NAOYA, NARUSHIMA YASUTO, ONO TOSHIAKI, HORAI MASATAKA, KOGA KOTARO
• Format: Patent
• Language: English; Japanese
• Published: 18.05.2023
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

To reduce a dislocation loop defect density which causes a lamination defect in a silicon wafer.SOLUTION: There is provided a silicon wafer having a diameter of 200 mm, a dopant of phosphorus, a resistivity of 0.5 mΩ cm or more and 1.2 mΩ cm or less, and a carbon concentration of 3×1016 atoms/cm3 or more.SELECTED DRAWING: Figure 5 【課題】シリコンウェーハにおいて、積層欠陥の原因となる転位ループ欠陥密度を少なくする。【解決手段】直径が２００ｍｍであり、ドーパントがリンであり、抵抗率が０．５ｍΩ・ｃｍ以上１．２ｍΩ・ｃｍ以下、かつ、炭素濃度が３×１０１６ａｔｏｍｓ／ｃｍ３以上であるシリコンウェーハを提供する。【選択図】図５