RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD

To provide a resist composition which achieves higher sensitivity and can form a resist pattern good in roughness reduction and patten shape.SOLUTION: The resist composition contains a base component (A), an acid generator component (B), and an acid diffusion control agent (D). The acid generator co...

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Bibliographic Details
Main Authors SOMEYA YASUO, KAIHO TAKAAKI
Format Patent
LanguageEnglish
Japanese
Published 18.05.2023
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:To provide a resist composition which achieves higher sensitivity and can form a resist pattern good in roughness reduction and patten shape.SOLUTION: The resist composition contains a base component (A), an acid generator component (B), and an acid diffusion control agent (D). The acid generator component (B) contains a compound (B0) having a molar extinction coefficient at an exposure wavelength of 193 nm of 50,000 mol-1 L cm-1 or less. The acid diffusion control agent (D) contains a compound (D0) represented by general formula (d0). In the formula, Rd01 represents an optionally substituted cyclic group or the like; Yd01 represents a divalent linking group containing an oxygen atom; m represents an integer of 1 or more; and Mm+ represents an m-valent organic cation.SELECTED DRAWING: None 【課題】高感度化が図れ、かつ、ラフネスの低減性及びパターン形状が良好なレジストパターンを形成することができるレジスト組成物の提供。【解決手段】基材成分（Ａ）と、酸発生剤成分（Ｂ）と、酸拡散制御剤（Ｄ）とを含有し、酸発生剤成分（Ｂ）は、露光波長１９３ｎｍのモル吸光係数が５００００ｍｏｌ－１・Ｌ・ｃｍ－１以下である化合物（Ｂ０）を含み、酸拡散制御剤（Ｄ）は、一般式（ｄ０）で表される化合物（Ｄ０）を含む、レジスト組成物。式中、Ｒｄ０１は、置換基を有してもよい環式基等である。Ｙｄ０１は、酸素原子を含む２価の連結基である。ｍは１以上の整数であって、Ｍｍ＋はｍ価の有機カチオンである。［化１］TIFF2023069242000079.tif12170【選択図】なし
Bibliography:Application Number: JP20210180983