METHOD OF FORMING FILM AND APPARATUS OF FORMING FILM

• Main Authors: MIYATANI KOTARO, NAKAMURA HIDEO, KARAKAWA TAKAYUKI, HARADA TAKESHIGE, MOROZUMI YUICHIRO
• Format: Patent
• Language: English; Japanese
• Published: 16.05.2023
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To provide a technology of forming a film of a crystal structure containing strontium and titanium on a titanium nitride film.SOLUTION: An amorphous structure film is formed on a titanium nitride film formed on an upper surface of a substrate, the amorphous film containing strontium and oxygen with a content ratio of titanium to strontium at an atomic number level of 0 or more and less than 1.0. Then the substrate with the amorphous structure film formed thereon is heated to a temperature of 500°C or more to obtain a crystal structure film that includes titanium diffused from the titanium nitride film and contains strontium, titanium and oxygen.SELECTED DRAWING: Figure 1 【課題】窒化チタン膜上に、ストロンチウムとチタンと酸素とを含有する結晶構造の膜を形成する技術を提供すること。【解決手段】前記基板に形成された窒化チタン膜の上面に、ストロンチウムと酸素とを含有し、ストロンチウムに対するチタンの原子数基準の含有比が０以上、１．０未満の範囲内の値であるアモルファス構造の膜を形成する。次いで、前記アモルファス構造の膜が形成された前記基板を、５００℃以上の温度で加熱し、前記窒化チタン膜から拡散したチタンを含む、前記ストロンチウムとチタンと酸素とを含有する結晶構造の膜を得る。【選択図】図１