MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETORESISTANCE EFFECT SENSOR

To enable detection of the magnetic field of the magnetic material concerned even when the magnetic material to be detected comes into contact with the GMR sensor.SOLUTION: The present disclosure proposes a magnetoresistance effect element having an antiferromagnetic layer, a ferromagnetic fixed lay...

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Bibliographic Details
Main Authors FUKATANI NAOTO, ICHIMURA MASAHIKO
Format Patent
LanguageEnglish
Japanese
Published 16.05.2023
Subjects
ELECTRICITY
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Summary:To enable detection of the magnetic field of the magnetic material concerned even when the magnetic material to be detected comes into contact with the GMR sensor.SOLUTION: The present disclosure proposes a magnetoresistance effect element having an antiferromagnetic layer, a ferromagnetic fixed layer, a nonmagnetic intermediate layer, a ferromagnetic free layer, and a protective layer on a substrate, wherein the aspect ratio of the width to length of the magnetoresistance effect element is between 1:5 and 1:300 and the width is configured as a line shape between 190 nm and 620 nm.SELECTED DRAWING: Figure 9 【課題】検出対象の磁性体がＧＭＲセンサに接触する場合であっても当該磁性体の磁界を検出することを可能にする。【解決手段】本開示は、基板上に、反強磁性層と、強磁性固定層と、非磁性中間層と、強磁性自由層と、保護層とを有する磁気抵抗効果素子であって、磁気抵抗効果素子の横幅と長さのアスペクト比が１：５以上１：３００以下で、横幅が１９０ｎｍ以上６２０ｎｍ以下の線状に構成されている、磁気抵抗効果素子について提案する。【選択図】図９
Bibliography:Application Number: JP20210178775