IGZO SPUTTERING TARGET

• Main Authors: OSADA KOZO, MURAI KAZUTAKA
• Format: Patent
• Language: English; Japanese
• Published: 16.05.2023
• Subjects: ARTIFICIAL STONE; CEMENTS; CERAMICS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS; CONCRETE; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; LIME, MAGNESIA; METALLURGY; REFRACTORIES; SLAG; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TREATMENT OF NATURAL STONE

To provide an IGZO sputtering target that has high relative density while suppressing arcing and an increase in particle at the time of sputtering.SOLUTION: An IGZO sputtering target includes indium (In), gallium (Ga), zinc (Zn), zirconium (Zr), oxygen (O) and the balance inevitable impurities, where Zr is less than 20 mass ppm. The IGZO sputtering target has relative density of 95% or more.SELECTED DRAWING: None 【課題】スパッタリング時のアーキングやパーティクル増加などを抑制しつつ、相対密度の高いＩＧＺＯスパッタリングターゲットを提供すること。【解決手段】インジウム（Ｉｎ）、ガリウム（Ｇａ）、亜鉛（Ｚｎ）、ジルコニウム（Ｚｒ）、及び酸素（Ｏ）を含有し、残部が不可避的不純物で構成され、Ｚｒを２０質量ｐｐｍ未満で含有し、相対密度が９５％以上であるＩＧＺＯスパッタリングターゲット。【選択図】なし