METHODS AND APPARATUSES FOR PREVENTION OF TEMPERATURE INTERACTION IN SEMICONDUCTOR PROCESSING SYSTEMS

• Main Author: MORI YUKIHIRO
• Format: Patent
• Language: English; Japanese
• Published: 28.04.2023
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To provide methods and apparatuses for semiconductor manufacturing.SOLUTION: Described herein are reactor chamber configurations in which susceptors are provided with one or more things or heaters equipped with fan-shaped separate temperature control functions. In some embodiments, the heaters in conjunction with an active cooling mechanism may be configured to compensate for temperature non-uniformity caused by, for example, adjacent structures including heat sources and heat sinks. In some embodiments, separate temperature control may be achieved by multi-zone independent heating or cooling elements within each susceptor.SELECTED DRAWING: Figure 4A 【課題】半導体製造のための方法および装置を提供する。【解決手段】サセプタには、扇形の分離した温度制御機能を装備する一つ以上のものまたはヒーターが提供された、反応器チャンバ構成が本明細書に記述される。一部の実施形態では、ヒーターは、能動冷却機構と併せて、例えば、加熱源およびヒートシンクを含む隣接する構造によって引き起こされる温度の不均一性を補償するように構成されてもよい。一部の実施形態では、別個の温度制御は、各サセプタ内のマルチゾーン独立加熱または冷却要素によって達成されてもよい。【選択図】図４Ａ