PHOTOACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING METHOD
To provide a chemically amplified resist composition which is excellent in balance of sensitivity, CDU, LWR, MEF and DOF in photolithography using high-energy rays as a light source and can form a rectangular pattern, a photoacid generator used therefor, and a pattern forming method using the resist...
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Main Authors | , , |
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Format | Patent |
Language | English Japanese |
Published |
27.04.2023
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Subjects | |
Online Access | Get full text |
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Summary: | To provide a chemically amplified resist composition which is excellent in balance of sensitivity, CDU, LWR, MEF and DOF in photolithography using high-energy rays as a light source and can form a rectangular pattern, a photoacid generator used therefor, and a pattern forming method using the resist composition.SOLUTION: The photoacid generator is an onium salt compound which comprises an anion containing an iodine atom-substituted aromatic group and two sulfonate groups, and a sulfonium cation or an iodonium cation. The chemically amplified resist composition contains the photoacid generator.SELECTED DRAWING: None
【課題】高エネルギー線を光源とするフォトリソグラフィーにおいて、感度、CDU、LWR、MEF、DOFのバランスに優れ、かつ矩形なパターンを形成できる化学増幅レジスト組成物、これに使用される光酸発生剤、及び該レジスト組成物を用いるパターン形成方法を提供する。【解決手段】ヨウ素原子で置換された芳香族基と2つのスルホネート基とを含むアニオン及びスルホニウムカチオン又はヨードニウムカチオンからなるオニウム塩化合物である光酸発生剤、及び該光酸発生剤を含む化学増幅レジスト組成物。【選択図】なし |
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Bibliography: | Application Number: JP20210169695 |