SEMICONDUCTOR ELEMENT HAVING SEMICONDUCTOR OXIDE CHANNEL LAYER AND METHOD FOR MANUFACTURING THE SAME

• Main Author: YOON YOUNG GWANG
• Format: Patent
• Language: English; Japanese
• Published: 06.04.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a semiconductor element having a semiconductor oxide channel layer and a method for manufacturing the same.SOLUTION: A semiconductor element 100A has a substrate 10, an embedded insulating layer 20 on the substrate 10, a channel layer 42 and a source/drain layer 41 on the embedded insulating layer 20, and a gate electrode pattern 50 on the channel layer 42, the channel layer 42 and the source/drain layer 41 contain semiconductor oxide materials and the oxygen vacancy concentration of the channel layer 42 is higher than that of the source/drain layer 41.SELECTED DRAWING: Figure 1A 【課題】酸化物半導体チャネル層を有する半導体素子及びその製造方法を提供する。【解決手段】基板１０と、基板１０上の埋め込み絶縁層２０と、埋め込み絶縁層２０上のチャネル層４２及びソース／ドレイン層４１と、チャネル層４２上のゲート電極パターン５０とを備え、チャネル層４２及びソース／ドレイン層４１は、酸化物半導体物質を含み、チャネル層４２の酸素ベイカンシー濃度は、ソース／ドレイン層４１の酸素ベイカンシー濃度より高い半導体素子１００Ａが説明される。【選択図】図１Ａ