CHEMICAL LIQUID, AND PROCESSING METHOD

• Main Authors: SHIGENOI YUTA, MIZUTANI ATSUSHI
• Format: Patent
• Language: English; Japanese
• Published: 05.04.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a chemical liquid which is improved in etching capacity of an Al oxide, improved in suppression property of etching capacity of a Ga oxide and also improved in etching selectivity of the Ai oxide with respect to the Ga oxide, and a processing method using the chemical liquid.SOLUTION: The present invention relates to a chemical liquid containing phosphoric acid or salt thereof, a non-protonic polar solvent, water and a compound having a carboxy group and not having a hydroxy group or salt thereof. A content of the phosphoric acid or the salt thereof is 5.0 mass% or less with respect to a total mass of the chemical liquid. A content of the non-protonic polar solvent is 50.0 mass% or more with respect to the total mass of the chemical liquid. A content of the water is 2.0 mass% or more and less than 50.0 mass% with respect to the total mass of the chemical liquid.SELECTED DRAWING: None 【課題】Ａｌ酸化物のエッチング能に優れ、Ｇａ酸化物のエッチング能の抑制性に優れ、Ｇａ酸化物に対するＡｌ酸化物のエッチング選択性にも優れる薬液及び上記薬液を用いた処理方法の提供。【解決手段】リン酸又はその塩と、非プロトン性極性溶媒と、水と、カルボキシ基を有し、水酸基を有さない化合物又はその塩とを含む、薬液であって、リン酸又はその塩の含有量が、薬液の全質量に対して、５．０質量％以下であり、非プロトン性極性溶媒の含有量が、薬液の全質量に対して、５０．０質量％以上であり、水の含有量が、薬液の全質量に対して、２．０質量％以上５０．０質量％未満である、薬液。【選択図】なし