IMAGE SENSOR

• Main Authors: PARK JONG-EUN, PARK HAEYONG, CHOI SUNGSOO
• Format: Patent
• Language: English; Japanese
• Published: 30.03.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide an image sensor that increases the size of a gate electrode and simultaneously minimizes cross-talk between pixels.SOLUTION: An image sensor 500 comprises: a substrate 1 having a first surface 1a and a second surface 1b opposite to the first surface, the substrate comprising a first pixel...