IMAGE SENSOR

• Main Authors: PARK JONG-EUN, PARK HAEYONG, CHOI SUNGSOO
• Format: Patent
• Language: English; Japanese
• Published: 30.03.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide an image sensor that increases the size of a gate electrode and simultaneously minimizes cross-talk between pixels.SOLUTION: An image sensor 500 comprises: a substrate 1 having a first surface 1a and a second surface 1b opposite to the first surface, the substrate comprising a first pixel and a second pixel adjacent to the first pixel: a deep device isolation portion DTI disposed in the substrate and isolating the first pixel and the second pixel from each other: a transfer gate disposed on the first surface; a ground region disposed selectively in one of the first pixel and the second pixel; and a first color filter CF1 and a micro lens array layer ML sequentially stacked on the second surface. The deep device isolation portion includes a first isolation portion 20 and a second isolation portion 30 which vertically overlap with each other and are separated from each other. The first isolation portion includes a conductive pattern 24 extending from the first surface toward the second surface; a high-concentration doped pattern 26 on the conductive pattern; and a liner insulating pattern 25 between the conductive pattern and the high-concentration doped pattern.SELECTED DRAWING: Figure 5A 【課題】ゲート電極のサイズを増加と同時にピクセル間のクロストークを最小化するイメージセンサーを提供する。【解決手段】イメージセンサー５００は、第１面１ａとそれに反対になる第２面１ｂを有し、第１ピクセル及び隣接する第２ピクセルを含む基板１、基板内に配置され、第１ピクセル及び第２ピクセルを分離する深い素子分離部ＤＴＩ、第１面上に配置される伝送ゲート、第１ピクセル及び第２ピクセルの中で何れか１つに選択的に配置される接地領域、第２面上に順に積層される第１カラーフィルターＣＦ１及びマイクロレンズアレイ層ＭＬを含む。深い素子分離部は、垂直に重畳され、互いに離隔する第１分離部２０及び第２分離部３０を含む。第１分離部は、第１面から第２面に延長される導電パターン２４、導電パターン上の高濃度ドーピングパターン２６及び導電パターンと高濃度ドーピングパターンとの間のライナー絶縁パターン２５を含む。【選択図】図５Ａ