POLISHING COMPOSITION, POLISHING METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE

• Main Author: MAE RYOTA
• Format: Patent
• Language: English; Japanese
• Published: 30.03.2023
• Subjects: ADHESIVES; BASIC ELECTRIC ELEMENTS; CHEMISTRY; DRESSING OR CONDITIONING OF ABRADING SURFACES; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS; GRINDING; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; PAINTS; PERFORMING OPERATIONS; POLISHES; POLISHING; SEMICONDUCTOR DEVICES; TRANSPORTING

To provide means capable of polishing an organic material at a high polishing speed and improving a ratio of the polishing speed for the organic material to a polishing speed for the material having a metal-nitrogen bond.SOLUTION: A polishing composition according to the present invention contains zirconia particles, a selectivity improver for improving a ratio of a polishing speed for an organic material (b) to a polishing speed for a material (a) having a metal-nitrogen bond, and a dispersing medium, wherein in a particle size distribution of the zirconia particles obtained by a laser diffraction/scattering method, a diameter (D50) of the particles when a cumulative volume of the particles from a fine particle side reaches 50% of a total volume of the particles is 5 nm or more and 150 nm or less, and a pH of the polishing composition is less than 7.SELECTED DRAWING: None 【課題】有機材料を高い研磨速度で研磨することができ、かつ金属－窒素結合を有する材料の研磨速度に対する、有機材料の研磨速度の比を向上させる手段を提供する。【解決手段】ジルコニア粒子と、金属－窒素結合を有する材料（ａ）の研磨速度に対する、有機材料（ｂ）の研磨速度の比を向上させる選択比向上剤と、分散媒と、を含み、前記ジルコニア粒子のレーザー回折散乱法により求められる粒度分布において、微粒子側から積算粒子体積が全粒子体積の５０％に達するときの粒子の直径（Ｄ５０）が５ｎｍ以上１５０ｎｍ以下であり、ｐＨが７未満である、研磨用組成物。【選択図】なし