SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

• Main Author: SHIMIZU TATSUO
• Format: Patent
• Language: English; Japanese
• Published: 29.03.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a method for manufacturing a semiconductor device in which an impurity region is formed in a nitride semiconductor using an ion implantation method.SOLUTION: In a method for manufacturing a semiconductor device, first ion implantation is performed to implant either of carbon (C) or oxygen (O) into a nitride semiconductor layer. Second ion implantation is performed to implant hydrogen (H) into the nitride semiconductor layer. After the first ion implantation and the second ion implantation, a coating layer is formed on a surface of the nitride semiconductor layer. After the coating layer is formed, first heat treatment is performed. After the first heat treatment, the coating layer is peeled off. After the coating layer is peeled off, second heat treatment is performed.SELECTED DRAWING: Figure 1 【課題】窒化物半導体にイオン注入法を用いて不純物領域を形成する半導体装置の製造方法を提供する。【解決手段】実施形態の半導体装置の製造方法は、窒化物半導体層に炭素（Ｃ）又は酸素（Ｏ）のいずれか一方の元素を注入する第１のイオン注入を行い、窒化物半導体層に水素（Ｈ）を注入する第２のイオン注入を行い、第１のイオン注入、及び、第２のイオン注入の後に窒化物半導体層の表面に被覆層を形成し、被覆層を形成した後に第１の熱処理を行い、第１の熱処理の後に被覆層を剥離し、被覆層を剥離した後に第２の熱処理を行う。【選択図】図１