ORGANOMETALLIC ADDUCT COMPOUND AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE BY USING THE SAME

• Main Authors: KIM JAEWOON, YOSHII TAKAHIRO, HARANO KAZUKI, PARK GYUHEE, UCHIOKURA HIROYUKI, FUSE WAKANA, AOKI YUTARO, KOIDE YUKINOBU, CHO YOUN-JOUNG, KIM YOON-SOO, SAITO KAZUYA, RYU SEUNG-MIN, MANABE YOSHIKI, KIMURA MASAYUKI
• Format: Patent
• Language: English; Japanese
• Published: 28.03.2023
• Subjects: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; HETEROCYCLIC COMPOUNDS; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; ORGANIC CHEMISTRY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To provide an organometallic adduct compound and a method of manufacturing an integrated circuit device by using the same.SOLUTION: The invention provides an organometallic adduct compound of the general formula in the figure. In the formula, R1, R2, R3, R4 and R5 are each independently a hydrogen a...